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BC846 ... BC850
BC846 ... BC850 NPN
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung
2.9 0.1 0.4 3 1.30.1 1.1
NPN
250 mW SOT-23 (TO-236) 0.01 g
Version 2006-06-02 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
Type Code
1 1.9 2
Dimensions - Mae [mm] 1=B 2=E 3=C
Maximum ratings (TA = 25C)
2.5 max
Grenzwerte (TA = 25C) BC846 BC847 BC850 45 V 50 V 6V 250 mW ) 100 mA 200 mA -55...+150C -55...+150C
1
BC848 BC849 30 V 30 V 5V
Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur
B open E open C open
VCEO VCBO VEB0 Ptot IC ICM Tj TS
65 V 80 V
Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 5 V, IC = 10 A Group A Group B Group C Group A Group B Group C hFE hFE hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat - - - 110 200 420 - - - -
Kennwerte (Tj = 25C) Typ. 90 150 270 180 290 520 90 mV 200 mV 700 mV 900 mV Max. - - - 220 450 800 250 mV 600 mV - -
VCE = 5 V, IC = 2 mA
Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
1 2
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/
(c) Diotec Semiconductor AG
1
BC846 ... BC850 Characteristics (Tj = 25C) Min. Base-Emitter-voltage - Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 A, RG = 2 k f = 1 kHz, f = 200 Hz BC846 ... BC848 BC849 ... BC850 F F RthA - - 2 dB 1.2 dB < 420 K/W 1) BC856 ... BC859 BC846A = 1A BC847A = 1E BC848A = 1J BC846B = 1B BC847B = 1F BC848B = 1K BC849B = 2B BC850B = 2F BC847C = 1G BC848C = 1L BC849C = 2C BC850C = 2G 10 dB 4 dB CEB0 - 9 pF - CCBO - 3.5 pF 6 pF fT - 300 MHz - IEB0 - - 100 nA ICB0 ICB0 - - - - 15 nA 5 A VBE VBE 580 mV - 660 mV - 700 mV 720 mV Kennwerte (Tj = 25C) Typ. Max.
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstarkungsgruppen pro Typ
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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